PMF170XP NXP Semiconductors, PMF170XP Datasheet - Page 6

• Manufacturer Part Number: PMF170XP
• Description: P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMF170XP
Product data sheet
Fig 6.
Fig 8.
R
(mΩ)
DSon
(A)
I
D
500
400
300
200
100
–4
–3
–2
–1
0
0
–2.0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
Drain-source on-state resistance as a function
0
j
j
–4.5 V
= 25 °C
= 25 °C
GS
GS
GS
GS
GS
= -2.5 V
= -3.0 V
= -3.5 V
= -4.0 V
= -4.5 V
–2.5
–1
–3.0 V
–2.5 V
–2.0 V
–1.8 V
–1.5 V
V
–3.0
GS
–2
= –3.5 V
–3.5
–3
All information provided in this document is subject to legal disclaimers.
(1)
(3)
(5)
V
017aaa303
017aaa304
I
DS
D
(A)
(V)
(2)
(4)
Rev. 1 — 2 September 2011
–4.0
–4
Fig 7.
Fig 9.
R
(mΩ)
−10
−10
−10
−10
DSon
(A)
I
D
600
400
200
−3
−4
−5
−6
0
0.0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
0
D
j
= 25 °C; V
= -1 A
j
j
= 150 °C
= 25 °C
20 V, 1 A P-channel Trench MOSFET
−0.5
DS
–2
= -3 V
(1)
−1.0
PMF170XP
(2)
–4
(1)
(2)
V
V
© NXP B.V. 2011. All rights reserved.
GS
GS
(3)
017aaa129
017aaa305
(V)
(V)
− 1.5
–6
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