PMF170XP NXP Semiconductors, PMF170XP Datasheet - Page 8

• Manufacturer Part Number: PMF170XP
• Description: P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMF170XP
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
–5
–4
–3
–2
–1
0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= -1.0 A; V
= 0 V
j
j
= 150 °C
= 25 °C
DS
1
= -10 V; T
amb
(A)
2
I
–2.0
–1.5
–1.0
–0.5
S
0.0
= 25 °C
0.0
Q
All information provided in this document is subject to legal disclaimers.
G
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(nC)
Rev. 1 — 2 September 2011
3
–0.4
(1)
Fig 15. Gate charge waveform definitions
–0.8
V
(2)
V
SD
V
V
V
GS(pl)
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DS
GS(th)
GS
(V)
–1.2
20 V, 1 A P-channel Trench MOSFET
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
PMF170XP
GD
© NXP B.V. 2011. All rights reserved.
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