PMGD280UN NXP Semiconductors, PMGD280UN Datasheet - Page 10

Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PMGD280UN

Manufacturer Part Number
PMGD280UN
Description
Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
8. Soldering
9. Revision history
Table 6:
9397 750 12763
Product data
Rev Date
Fig 15. Reflow soldering footprint for SOT363 (SC-88).
01
Dimensions in mm.
20040210
Revision history
CPCN
-
solder lands
solder resist
occupied area
solder paste
Description
Product data (9397 750 12763).
2.35
Rev. 01 — 10 February 2004
0.50
(4 )
0.50
(4 )
Dual N-channel TrenchMOS™ ultra low level FET
2.65
1.20
2.40
0.60
(2 )
MSA432
0.40
(2 )
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
0.90 2.10
PMGD280UN
10 of 12

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