PMGD280UN NXP Semiconductors, PMGD280UN Datasheet - Page 6

• Manufacturer Part Number: PMGD280UN
• Description: Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12763
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
( )
T
(A)
I D
j
j
0.8
0.6
0.4
0.2
2.5
1.5
0.5
= 25 C
= 25 C
1
0
2
1
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
0.5
0.5
4.5 V 3 V
V GS = 1.8 V
1
1
1.5
2.5 V
2 V
1.5
V GS = 1.5 V
V DS (V)
2
I D (A)
03an02
03an03
1.8 V
2.5 V
4.5 V
2 V
3 V
Rev. 01 — 10 February 2004
2.5
2
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
Dual N-channel TrenchMOS™ ultra low level FET
T
a
(A)
I D
a
j
2.5
1.5
0.5
1.5
0.5
= 25 C and 150 C; V
=
2
1
0
2
1
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
0
DSon 25 C
V DS > I D x R DSon
R
DSon
0
1
25 C
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
DS
60
2
PMGD280UN
I
D
x R
T j = 150 C
DSon
120
3
T j ( C)
V GS (V)
03an04
03af18
180
4
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