PMGD280UN NXP Semiconductors, PMGD280UN Datasheet - Page 4

• Manufacturer Part Number: PMGD280UN
• Description: Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 12763
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-sp)
Z th(j-sp)
(K/W)
10 3
10 2
10
1
10 -4
thermal resistance from junction to solder point
Thermal characteristics
0.2
0.1
0.05
0.02
= 0.5
single pulse
5.1 Transient thermal impedance
10 -3
Rev. 01 — 10 February 2004
10 -2
Conditions
Figure 4
Dual N-channel TrenchMOS™ ultra low level FET
10 -1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
1
PMGD280UN
Min
-
P
t p
t p (s)
T
Typ
-
03an28
=
t p
T
t
Max
300
10
Unit
K/W
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