PML260SN NXP Semiconductors, PML260SN Datasheet
PML260SN
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PML260SN Summary of contents
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... PML260SN N-channel TrenchMOS standard level FET Rev. 02 — 29 May 2006 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET surface-mounted plastic package using TrenchMOS technology. 1.2 Features I Standard level threshold I Very low thermal impedance 1.3 Applications I Primary side switching ...
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... pulsed unclamped inductive load 3 0.05 ms; V 200 starting Rev. 02 — 29 May 2006 PML260SN N-channel TrenchMOS standard level FET Min - - Figure 2 and 3 - Figure 2 - Figure © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...
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... I der (%) 150 200 Fig 2. Normalized continuous drain current as a Limit DSon Rev. 02 — 29 May 2006 PML260SN N-channel TrenchMOS standard level FET 100 150 ------------------- - 100 % der function of mounting base temperature ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PML260SN_2 Product data sheet N-channel TrenchMOS standard level FET Conditions Figure 4 minimum footprint - Rev. 02 — 29 May 2006 PML260SN Min Typ Max - - 2.5 [ 003aab280 ...
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... MHz see Figure 100 100 ; 5 3 see Figure 3 /dt = 100 120 V R Rev. 02 — 29 May 2006 PML260SN Min Typ Max 200 - - 178 - - and 1 4 100 - 10 100 - ...
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... V (V) DS Fig 6. Drain-source on-state resistance as a function 003aab065 (V) GS > DSon Fig 8. Normalized drain-source on-state resistance Rev. 02 — 29 May 2006 PML260SN N-channel TrenchMOS standard level FET 800 3.6 3.8 4 600 400 V GS 200 drain current; typical values ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aab066 (nC) G Fig 12. Gate charge waveform definitions Rev. 02 — 29 May 2006 PML260SN N-channel TrenchMOS standard level FET min typ max ( GS(pl) ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PML260SN_2 Product data sheet 003aab080 0 ( Fig 14. Input, output and reverse transfer capacitances Rev. 02 — 29 May 2006 PML260SN N-channel TrenchMOS standard level FET (pF MHz function of drain-source voltage ...
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... 2.3 3.4 1.68 0.55 0.52 0.65 1.95 2.2 3.2 1.58 0.45 0.42 REFERENCES JEDEC JEITA - - - - - - Rev. 02 — 29 May 2006 PML260SN N-channel TrenchMOS standard level FET detail 0.1 0.05 0.1 0.1 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2006. All rights reserved. SOT873 ISSUE DATE ...
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... Philips Semiconductors. PML260SN_1 20051222 PML260SN_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Preliminary data sheet - Rev. 02 — 29 May 2006 PML260SN Supersedes PML260SN_1 - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 02 — 29 May 2006 PML260SN N-channel TrenchMOS standard level FET Trademarks © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. PML260SN All rights reserved. Date of release: 29 May 2006 Document identifier: PML260SN_2 ...