PML260SN NXP Semiconductors, PML260SN Datasheet - Page 7

• Manufacturer Part Number: PML260SN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
PML260SN_2
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Gate-source voltage as a function of gate
V
GS(th)
(V)
V
(V)
GS
10
5
4
3
2
1
0
8
6
4
2
0
I
junction temperature
I
charge; typical values
D
D
60
0
= 1 mA; V
= 2.6 A; V
0
DS
DS
4
= V
= 100 V
GS
60
8
max
min
typ
120
12
Q
003aab066
T
G
j
( C)
(nC)
03aa32
180
16
Rev. 02 — 29 May 2006
Fig 10. Sub-threshold drain current as a function of
Fig 12. Gate charge waveform definitions
(A)
I
10
10
10
10
10
10
D
1
2
3
4
5
6
T
gate-source voltage
0
j
V
= 25 C; V
V
V
V
GS(pl)
N-channel TrenchMOS standard level FET
DS
GS(th)
GS
Q
DS
GS1
= 5 V
2
I
Q
D
GS
Q
min
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
GS2
Q
G(tot)
typ
Q
PML260SN
GD
4
max
V
GS
003aaa508
(V)
03aa35
6
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