PML260SN NXP Semiconductors, PML260SN Datasheet - Page 6

• Manufacturer Part Number: PML260SN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
PML260SN_2
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
I
(A)
D
I
D
12
12
8
4
0
8
4
0
T
function of drain-source voltage; typical values
T
function of gate-source voltage; typical values
0
0
j
j
= 25 C
= 25 C and 150 C; V
1
1
2
2
T
V
j
GS
= 150 C
DS
(V) = 10
> I
3
3
D
R
DSon
4
4
25 C
003aab063
5
003aab065
4
3.8
3.6
3.4
3.2
V
V
DS
GS
(V)
(V)
5
5
Rev. 02 — 29 May 2006
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
800
600
400
200
a
0
3
2
1
0
T
of drain current; typical values
factor as a function of junction temperature
-60
a
0
j
= 25 C
=
N-channel TrenchMOS standard level FET
----------------------------- -
R
DSon 25 C
R
DSon
0
3.6
4
3.8
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
60
4
PML260SN
8
V
120
GS
(V) =
I
D
003aab064
T
(A)
j
( C)
03al52
10
5
180
12
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