PMR780SN NXP Semiconductors, PMR780SN Datasheet - Page 5

• Manufacturer Part Number: PMR780SN
• Description: Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 12666
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
Characteristics
Conditions
I
I
V
V
V
V
I
V
V
D
D
D
S
DS
GS
GS
GS
GS
DD
T
T
T
T
T
T
T
T
T
= 0.3 A; V
= 1 A; V
= 0.25 mA; V
= 1 A; V
Rev. 01 — 5 March 2004
j
j
j
j
j
j
j
j
j
= 60 V; V
= 20 V; V
= 10 V; I
= 4.5 V; I
= 0 V; V
= 30 V; R
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 100 C
= 25 C
= 150 C
DD
GS
GS
DS
D
D
= 30 V; V
GS
L
= 0.3 A;
= 0 V
DS
= 0.075 A;
= 15 ; V
= 0 V;
DS
= 30 V; f = 1 MHz;
= 0 V
= 0 V
= V
Figure 12
GS
N-channel TrenchMOS™ standard level FET
GS
Figure 7
;
GS
Figure 9
= 10 V;
Figure 7
= 10 V; R
and
Figure 13
Figure 11
and
8
G
= 6
8
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PMR780SN
Min
60
55
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
2
-
-
0.05
-
10
780
1445 1700 m
1100 1400 m
1.05
0.2
0.22
23
5
3.5
2
4
5
2.2
0.83
Max
-
-
3
-
3.4
1
100
100
920
-
-
-
-
-
-
-
-
-
-
1.2
5 of 12
Unit
V
V
V
V
V
nA
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
A
A