PMR780SN NXP Semiconductors, PMR780SN Datasheet - Page 6

• Manufacturer Part Number: PMR780SN
• Description: Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12666
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
T
( )
(A)
I D
j
j
1.5
0.5
= 25 C
= 25 C
3
2
1
0
2
1
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
V GS = 3.5 V
0.2
1
0.4
0.6
4 V
2
10 V
V DS (V)
0.8
V GS = 3 V
I D (A)
03an88
03an89
4.5 V
4.5 V
3.5 V
10 V
6 V
5 V
4 V
5 V
6 V
3
1
Rev. 01 — 5 March 2004
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
a
(A)
I D
j
0.8
0.6
0.4
0.2
2.4
1.8
1.2
0.6
= 25 C and 150 C; V
=
N-channel TrenchMOS™ standard level FET
0
1
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
0
DSon 25 C
V DS > I D x R DSon
R
DSon
1
0
T j = 150 C
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
DS
60
I
D
x R
3
PMR780SN
DSon
25 C
120
4
T j ( C)
V GS (V)
03an90
03aa28
180
5
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