PMR780SN NXP Semiconductors, PMR780SN Datasheet - Page 8

• Manufacturer Part Number: PMR780SN
• Description: Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12666
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
0.8
0.6
0.4
0.2
= 25 C and 150 C; V
1
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.3
150 C
GS
0.6
= 0 V
0.9
T j = 25 C
V SD (V)
03an91
1.2
Rev. 01 — 5 March 2004
Fig 13. Gate-source voltage as a function of gate
V GS
I
(V)
D
= 1 A; V
10
N-channel TrenchMOS™ standard level FET
8
6
4
2
0
charge; typical values.
0
I D = 1 A
T j = 25 C
V DD = 30 V
DD
= 30 V
0.3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
0.6
PMR780SN
0.9
Q G (nC)
03an93
1.2
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