PMT29EN NXP Semiconductors, PMT29EN Datasheet

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

PMT29EN

Manufacturer Part Number
PMT29EN
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
Table 1.
[1]
2. Pinning information
Table 2.
Symbol
V
V
I
Static characteristics
R
Pin
1
2
3
4
D
DS
GS
DSon
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Symbol Description
G
D
S
D
Quick reference data
Pinning information
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
gate
drain
source
drain
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMT29EN
30 V, 6 A N-channel Trench MOSFET
Rev. 1 — 31 August 2011
Logic-level compatible
Very fast switching
Relay driver
High-speed line driver
Conditions
T
V
V
j
GS
GS
= 25 °C
= 10 V; T
= 10 V; I
Simplified outline
D
amb
= 6 A; T
SOT223 (SC-73)
= 25 °C
1
j
= 25 °C
2
4
3
Trench MOSFET technology
Low-side loadswitch
Switching circuits
[1]
Graphic symbol
Min
-
-20
-
-
G
Product data sheet
Typ
-
-
-
24
017aaa253
D
S
2
Max
30
20
6
29
.
Unit
V
V
A
mΩ

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PMT29EN Summary of contents

Page 1

... PMT29EN N-channel Trench MOSFET Rev. 1 — 31 August 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching 1.3 Applications  ...

Page 2

... Product data sheet Description plastic surface-mounted package with increased heatsink; 4 leads Marking code MT29EN All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 PMT29EN N-channel Trench MOSFET Version SOT223 © NXP B.V. 2011. All rights reserved ...

Page 3

... I der (%) −75 − Normalized continuous drain current as a function of junction temperature PMT29EN Max Unit 3 820 mW 1760 mW 8330 mW 150 °C 150 °C 150 °C 1 017aaa124 125 ...

Page 4

... Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm PMT29EN Product data sheet / Conditions in free air All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 PMT29EN N-channel Trench MOSFET 017aaa319 (1) (2) (3) (4) (5) ( (V) ...

Page 5

... ° 150 ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 PMT29EN N-channel Trench MOSFET 017aaa320 (s) p 017aaa321 (s) p Min Typ ...

Page 6

... ° 017aaa322 ( 3 3 (V) DS Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 PMT29EN N-channel Trench MOSFET Min Typ - - - - - 9.6 - 1 492 - 115 - Ω ...

Page 7

... V (V) GS Fig 11. Normalized drain-source on-state resistance as All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 PMT29EN N-channel Trench MOSFET ( 150 ° °C j Drain-source on-state resistance as a function of gate-source voltage ...

Page 8

... Fig 13. Input, output and reverse transfer capacitances 017aaa313 7.5 10.0 Q (nC °C Fig 15. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 PMT29EN N-channel Trench MOSFET – MHz ...

Page 9

... 0.0 0.2 0.4 0.6 P duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 PMT29EN N-channel Trench MOSFET 017aaa327 (2) 0.8 1 © NXP B.V. 2011. All rights reserved ...

Page 10

... scale 0.32 6.7 3.7 7.3 4.6 2.3 0.22 6.3 3.3 6.7 REFERENCES JEDEC JEITA SC-73 All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 PMT29EN N-channel Trench MOSFET detail 1.1 0.95 0.2 0.1 0.1 0.7 0.85 EUROPEAN PROJECTION SOT223 X v ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 PMT29EN N-channel Trench MOSFET solder lands solder resist 7.65 solder paste occupied area Dimensions in mm solder lands solder resist 8.7 occupied area Dimensions in mm preferred transport direction during soldering 1 ...

Page 12

... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMT29EN v.1 20110831 PMT29EN Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 PMT29EN N-channel Trench MOSFET ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 PMT29EN N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 PMT29EN N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMT29EN All rights reserved. Date of release: 31 August 2011 Document identifier: PMT29EN ...

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