PMT29EN NXP Semiconductors, PMT29EN Datasheet - Page 9

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

PMT29EN

Manufacturer Part Number
PMT29EN
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
8. Test information
PMT29EN
Product data sheet
Fig 16. Source current as a function of source-drain voltage; typical values
Fig 17. Duty cycle definition
V
(1) T
(2) T
GS
= 0 V
j
j
= 150 °C
= 25 °C
(A)
I
S
10
8
6
4
2
0
0.0
All information provided in this document is subject to legal disclaimers.
P
0.2
Rev. 1 — 31 August 2011
t
1
0.4
t
2
duty cycle δ =
0.6
(1)
006aaa812
0.8
t
017aaa327
t
t
V
1
2
(2)
SD
(V)
1.0
30 V, 6 A N-channel Trench MOSFET
PMT29EN
© NXP B.V. 2011. All rights reserved.
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