PMT29EN NXP Semiconductors, PMT29EN Datasheet - Page 5

• Manufacturer Part Number: PMT29EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
PMT29EN
Product data sheet
Symbol
Static characteristics
V
V
I
DSS
Fig 4.
Fig 5.
(BR)DSS
GSth
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
–3
–3
duty cycle = 1
Characteristics
0.25
0.5
0.1
0.75
0.33
0.05
0.01
duty cycle = 1
0.2
0
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
0.25
0.02
0.75
0.33
0.05
0.5
0.1
0.2
0
0.02
0.01
10
10
–2
–2
Conditions
I
I
V
V
All information provided in this document is subject to legal disclaimers.
D
D
10
10
DS
DS
= 250 µA; V
= 250 µA; V
–1
–1
= 30 V; V
= 30 V; V
2
Rev. 1 — 31 August 2011
GS
GS
GS
DS
= 0 V; T
= 0 V; T
= V
= 0 V; T
1
1
GS
; T
j
j
j
= 25 °C
= 150 °C
j
= 25 °C
= 25 °C
10
10
30 V, 6 A N-channel Trench MOSFET
Min
30
1
-
-
10
10
2
2
Typ
-
1.5
-
-
PMT29EN
t
t
p
p
© NXP B.V. 2011. All rights reserved.
(s)
(s)
017aaa320
017aaa321
Max
-
2.5
1
10
10
10
3
3
Unit
V
V
µA
µA
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