PSMN011-30YL NXP Semiconductors, PSMN011-30YL Datasheet - Page 3

• Manufacturer Part Number: PSMN011-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN011-30YL
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
(A)
I
10
D
10
10
10
60
40
20
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
mb
= 25°C; I
50
DM
is single pulse
100
Limit R
150
DSon
All information provided in this document is subject to legal disclaimers.
T
003aaf432
mb
1
= V
(°C)
DS
200
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
/ I
Rev. 2 — 17 May 2011
D
Fig 2.
P
(%)
der
120
80
40
DC
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
PSMN011-30YL
100
V
DS
(V)
1 ms
10 ms
100 μ s
100 ms
t
p
=10 μ s
150
© NXP B.V. 2011. All rights reserved.
T
003aaf433
mb
03aa16
(°C)
10
200
2
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