PSMN011-30YL NXP Semiconductors, PSMN011-30YL Datasheet - Page 9

• Manufacturer Part Number: PSMN011-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN011-30YL
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
GS
= 0 V
(A)
I
S
50
40
30
20
10
0
0
All information provided in this document is subject to legal disclaimers.
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
0.3
Rev. 2 — 17 May 2011
T
j
= 150 °C
0.6
0.9
T
j
V
= 25 °C
003aaf443
SD
(V)
1.2
PSMN011-30YL
© NXP B.V. 2011. All rights reserved.
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