PSMN030-150B NXP Semiconductors, PSMN030-150B Datasheet - Page 4

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PSMN030-150B

Manufacturer Part Number
PSMN030-150B
Description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
PSMN030-150B
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Part Number:
PSMN030-150B
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5. Thermal characteristics
Table 5.
PSMN030-150B
Product data sheet
Symbol
R
R
Fig 5.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
All information provided in this document is subject to legal disclaimers.
0.2
0.1
0.05
0.02
δ
= 0.5
10
Rev. 02 — 13 December 2010
−5
Conditions
minimum footprint ; FR4 board
single pulse
10
−4
N-channel TrenchMOS SiliconMAX standard level FET
10
−3
P
10
−2
t
p
T
10
003aaf141
−1
δ =
t
p
(s)
T
t
t
p
1
PSMN030-150B
Min
-
-
Typ
-
50
© NXP B.V. 2010. All rights reserved.
Max
0.6
-
Unit
K/W
K/W
4 of 12

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