PSMN030-150B NXP Semiconductors, PSMN030-150B Datasheet - Page 6

• Manufacturer Part Number: PSMN030-150B
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN030-150B
Product data sheet
Fig 6.
Fig 8.
Fig 10. Normalized drain-source on-state resistance
(A)
(A)
I
I
a
D
D
2.9
2.1
1.3
0.5
80
60
40
20
50
40
30
20
10
0
0
−60
function of drain-source voltage; typical values
function of gate-source voltage; typical values
factor as a function of junction temperature
T
Output characteristics: drain current as a
V
Transfer characteristics: drain current as a
0
0
j
DS
= 25 °C
> I
D
0.4
x R
2
DSon
20
V
T
GS
j
0.8
= 175 °C
(V) = 10
4
8
1.2
100
T
j
= 25 °C
6
1.6
T
All information provided in this document is subject to legal disclaimers.
V
j
(°C)
5.4
5.2
003aaf142
4.8
003aaf144
003aaf146
V
GS
6
5
4.4
DS
4.6
(V)
(V)
Rev. 02 — 13 December 2010
180
2
8
N-channel TrenchMOS SiliconMAX standard level FET
Fig 7.
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
R
V
DS(on)
GS(th)
(Ω)
(S)
(V)
g
0.07
0.05
0.03
0.01
fs
60
40
20
0
5
4
3
2
1
0
−60
of drain current; typical values
drain current; typical values
junction temperature
T
Drain-source on-state resistance as a function
V
Forward transconductance as a function of
I
0
0
D
j
DS
= 25 °C
= 1 mA; V
4.4
> I
D
4.6
10
10
x R
DSon
DS
4.8
20
= V
PSMN030-150B
20
20
maximum
GS
minimum
5
typical
T
T
j
j
= 25 °C
= 175 °C
30
30
100
5.2
V
GS
© NXP B.V. 2010. All rights reserved.
T
40
40
j
(V) = 10
(°C)
003aaf143
003aaf145
003aaf148
I
I
5.4
D
D
(A)
(A)
6
8
180
50
50
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