PSMN030-150B NXP Semiconductors, PSMN030-150B Datasheet - Page 5

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PSMN030-150B

Manufacturer Part Number
PSMN030-150B
Description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN030-150B
Manufacturer:
NXP
Quantity:
15 000
Part Number:
PSMN030-150B
Manufacturer:
NXP
Quantity:
42 000
NXP Semiconductors
6. Characteristics
Table 6.
PSMN030-150B
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
V
V
I
V
V
measured from tab to centre of die ;
measured from source lead to source
I
Conditions
I
I
I
I
V
V
V
V
T
T
R
T
bond pad ; T
I
V
Rev. 02 — 13 December 2010
D
D
D
D
D
D
S
S
j
j
j
DS
DS
GS
GS
GS
GS
DS
DS
GS
G(ext)
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 55.5 A; V
= 25 °C
= 25 °C
= 25 °C
= 25 A; V
= 20 A; dI
= 150 V; V
= 150 V; V
= 25 V; V
= 75 V; R
= 10 V; V
= -10 V; V
= 10 V; I
= 10 V; I
= 0 V; V
= 5.6 Ω; T
GS
N-channel TrenchMOS SiliconMAX standard level FET
S
DS
DS
DS
j
DS
D
D
/dt = -100 A/µs;
DS
= 25 °C
DS
GS
L
DS
= 25 A; T
= 25 A; T
= 0 V; T
GS
GS
= V
= V
= V
= 1.5 Ω; V
GS
GS
= 30 V; T
= 120 V; V
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
j
= 25 °C
j
j
j
j
j
j
j
= 175 °C
= -55 °C
= 25 °C
= 175 °C
= 25 °C
j
GS
= 25 °C
= 25 °C
j
j
j
j
= 25 °C
= 25 °C
= 175 °C
GS
= -55 °C
= 25 °C
= 10 V;
= 10 V;
PSMN030-150B
Min
133
150
1
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3
0.05
-
2
2
-
24
98
16
38
3680
470
220
18
71
97
76
3.5
7.5
0.85
109
610
© NXP B.V. 2010. All rights reserved.
-
Max
-
-
-
6
4
10
500
100
100
81
30
-
-
50
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
nC
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