PSMN2R0-30YL NXP Semiconductors, PSMN2R0-30YL Datasheet - Page 6

• Manufacturer Part Number: PSMN2R0-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN2R0-30YL
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
R
(mΩ)
DSon
80
(A)
60
40
20
I
7
6
5
4
3
2
1
D
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
Characteristics
V
GS
Parameter
source-drain voltage
reverse recovery time
recovered charge
(V) = 3 V
50
1
T
…continued
j
= 150 °C
4
10
100
2
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
I
GS
D
DS
003aac470
003aac475
= 25 A; V
= 20 A; dI
(A)
25 °C
(V)
Figure 17
= 20 V
150
3
Rev. 4 — 10 March 2011
GS
S
/dt = -100 A/µs; V
= 0 V; T
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
Fig 6.
Fig 8.
j
= 25 °C;
160
140
120
100
(S)
g
150
100
(A)
80
60
40
I
50
fs
D
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
GS
0
0
10
= 0 V;
4
2
20
PSMN2R0-30YL
4
Min
-
-
-
40
V
GS
6
(V) = 3
Typ
0.78
43
49
60
© NXP B.V. 2011. All rights reserved.
8
003aac474
003aac477
I
D
V
(A)
DS
2.8
2.6
Max
1.2
-
-
2.4
2.2
(V)
10
80
Unit
V
ns
nC
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