PSMN4R0-40YS NXP Semiconductors, PSMN4R0-40YS Datasheet - Page 9

• Manufacturer Part Number: PSMN4R0-40YS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN4R0-40YS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
12
10
9
6
3
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
(V) = 5.5
30
10
8V
V
DS
60
20
= 20V
90
30
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Q
003aad162
003aad157
I
D
32V
G
6.5
10
20
(A)
6
7
8
(nC)
120
40
Rev. 02 — 12 July 2010
N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
10
(pF)
10
10
C
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
PSMN4R0-40YS
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
003aad158
(V)
C
C
C
oss
iss
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10
2
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