PSMN5R9-30YL NXP Semiconductors, PSMN5R9-30YL Datasheet - Page 4

• Manufacturer Part Number: PSMN5R9-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN5R9-30YL
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
1
-1
-2
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
Thermal characteristics
0.05
0.2
0.1
0.02
single shot
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 16 May 2011
N-channel 6.1 mΩ 30 V TrenchMOS logic level FET in LFPAK
Conditions
see
10
-3
Figure 4
10
-2
PSMN5R9-30YL
Min
-
10
P
-1
t
Typ
1.17
p
T
t
p
© NXP B.V. 2011. All rights reserved.
(s)
003aaf114
δ =
Max
2.37
t
T
p
t
1
Unit
K/W
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