PSMN5R9-30YL NXP Semiconductors, PSMN5R9-30YL Datasheet - Page 6

• Manufacturer Part Number: PSMN5R9-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN5R9-30YL
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
I
fs
D
80
60
40
20
80
60
40
20
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
V
Characteristics
GS
(V) = 10
Parameter
source-drain voltage
reverse recovery time
recovered charge
0.5
20
4.5
…continued
40
1
1.5
60
All information provided in this document is subject to legal disclaimers.
003aaf117
V
003aaf115
I
D
DS
(A)
3.5
(V)
3.4
2.6
2.4
2.2
3.2
3.0
2.8
Conditions
I
see
I
V
S
S
80
GS
2
= 20 A; V
= 20 A; dI
Rev. 2 — 16 May 2011
N-channel 6.1 mΩ 30 V TrenchMOS logic level FET in LFPAK
Figure 17
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
Fig 6.
Fig 8.
= 15 V
(pF)
C
(A)
2500
2000
1500
1000
I
D
500
80
60
40
20
0
j
0
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
Input and reverse transfer capacitances as a
= 25 °C;
0
0
1
2
PSMN5R9-30YL
Min
-
-
-
T
j
2
4
= 175 °C
Typ
0.85
32
25
3
6
© NXP B.V. 2011. All rights reserved.
T
j
V
V
003aaf116
= 25 °C
003aaf118
GS
GS
Max
1.2
-
-
(V)
C
(V)
C
rss
iss
4
8
Unit
V
ns
nC
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