PSMN5R9-30YL NXP Semiconductors, PSMN5R9-30YL Datasheet - Page 8

• Manufacturer Part Number: PSMN5R9-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN5R9-30YL
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
a
(V)
1.5
0.5
GS
10
2
1
0
8
6
4
2
0
−60
factor as a function of junction temperature
charge; typical values
0
5
0
6V
24V
10
60
15
120
V
DS
20
All information provided in this document is subject to legal disclaimers.
= 15V
003aaf122
T
Q
j
G
( ° C)
03aa27
(nC)
180
25
Rev. 2 — 16 May 2011
N-channel 6.1 mΩ 30 V TrenchMOS logic level FET in LFPAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
PSMN5R9-30YL
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
© NXP B.V. 2011. All rights reserved.
DS
003aaa508
003aaf119
C
C
C
(V)
iss
rss
oss
10
2
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