BLF6G10L-40BRN NXP Semiconductors, BLF6G10L-40BRN Datasheet - Page 8

• Manufacturer Part Number: BLF6G10L-40BRN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLF6G10L-40BRN
Product data sheet
Document ID
BLF6G10L-40BRN v.3
Modifications:
BLF6G10L-40BRN v.2
BLF6G10L-40BRN v.1
Revision history
Table 11.
Acronym
3GPP
CCDF
DPCH
ESD
GSM
LDMOS
LTE
PAR
RF
VSWR
W-CDMA
20101116
Release date
20100827
20100809
•
•
•
•
In the entire data sheet the typical value of I
Table 6 on page
Table 7 on page
Section 7.1 on page
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Dedicated Physical CHannel
ElectroStatic Discharge
Global System for Mobile communications
Laterally Diffused Metal-Oxide Semiconductor
Long Term Evolution
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
3: the values of I
3: Some values have been changed.
Rev. 3 — 16 November 2010
Data sheet status
Product data sheet
Preliminary data sheet
Preliminary data sheet
3: The value of VSWR has been corrected.
Dq
have been changed.
Dq
Change notice
-
-
-
has been changed to 390 mA.
BLF6G10L-40BRN
Power LDMOS transistor
Supersedes
BLF6G10L-40BRN v.2
BLF6G10L-40BRN v.1
-
© NXP B.V. 2010. All rights reserved.
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