BLF6G10LS-160RN NXP Semiconductors, BLF6G10LS-160RN Datasheet - Page 5

• Manufacturer Part Number: BLF6G10LS-160RN
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
BLF6G10-160RN_10LS-160RN_2
Product data sheet
Fig 4.
Fig 6.
(dB)
G
p
24
23
22
21
20
19
input
50 Ω
0
V
f
efficiency as functions of average load power;
typical values
Test circuit for operation at 900 MHz
2-carrier W-CDMA power gain and drain
2
DS
= 957.5 MHz; carrier spacing 5 MHz.
= 32 V; I
7.4 2-carrier W-CDMA
V
C1
Dq
GG
20
= 1200 mA; f
G
η
D
p
C15
R1
C14
1
40
= 952.5 MHz;
C12
P
L(AV)
C10
001aaj516
(W)
C8
Rev. 02 — 21 January 2010
60
50
40
30
20
10
0
C2
(%)
η
D
C6
Fig 5.
ACPR
(dBc)
−20
−40
−60
−80
C3
0
0
V
f
2-carrier W-CDMA adjacent channel power
ratio as function of average load power;
typical values
2
DS
= 957.5 MHz; carrier spacing 5 MHz.
BLF6G10(LS)-160RN
C5
= 32 V; I
C7
Dq
20
= 1200 mA; f
C9
C11
C13
Power LDMOS transistor
R2
L1
1
40
= 952.5 MHz;
P
C4
C16
L(AV)
© NXP B.V. 2010. All rights reserved.
001aah479
V
001aah480
DD
(W)
output
50 Ω
60
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