BLF7G10LS-250 NXP Semiconductors, BLF7G10LS-250 Datasheet - Page 3

• Manufacturer Part Number: BLF7G10LS-250
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
7. Test information
BLF7G10L-250_7G10LS-250
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Test signal: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 64 DPCH; f
RF performance at V
class-AB production test circuit.
The BLF7G10L-250 and BLF7G10LS-250 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol Parameter
V
V
I
I
I
Symbol
G
g
R
RL

ACPR
DSS
DSX
GSS
j
DS
fs
D
(BR)DSS
GS(th)
DS(on)
p
= 25
in
= 30 V; I

C unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
Characteristics
Functional test information
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Dq
= 1800 mA; P
All information provided in this document is subject to legal disclaimers.
DS
BLF7G10L-250; BLF7G10LS-250
= 30 V; I
Rev. 3 — 16 February 2012
1
Dq
L
= 920 MHz; f
= 200 W (CW); f = 920 MHz to 960 MHz.
= 1800 mA; T
Conditions
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
2
= 11.55 A
= 925 MHz; f
case
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
Conditions
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
GS(th)
GS(th)
= 25
= 60 W
= 60 W
= 60 W
= 60 W
D
DS
D
D
= 3.3 mA
+ 3.75 V;
DS
+ 3.75 V;

= 330 mA
C; unless otherwise specified; in a
= 11.55 A
= 28 V
3
= 0 V
= 955 MHz; f
Min
18.5 19.5
-
27
-
Power LDMOS transistor
Min
65
1.50
-
-
-
-
-
4
Typ
15.5
30.5
34
= 960 MHz;
© NXP B.V. 2012. All rights reserved.
Typ
-
1.9
-
56
-
22
57
Max
-
10
-
31
Max
-
2.30
5
-
0.5
-
-
Unit
dB
dB
%
dBc
3 of 13
Unit
V
V
A
A
mA
S
m