BLF7G10LS-250 NXP Semiconductors, BLF7G10LS-250 Datasheet - Page 5

• Manufacturer Part Number: BLF7G10LS-250
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G10L-250_7G10LS-250
Product data sheet
Fig 4.
Fig 5.
(dB)
G
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
p
21
20
19
18
17
16
38
V
Input return loss as a function of output power; typical values
V
Power gain and drain efficiency as function of
output power; typical values
DS
DS
= 30 V; I
= 30 V; I
40
7.4 2C-WCDMA
G
η
D
p
42
Dq
Dq
(1)
(2)
(3)
= 1800 mA.
= 1800 mA.
44
46
RL
(dB)
(1)
(2)
(3)
-12
-14
-16
-18
-20
in
48
44
P
All information provided in this document is subject to legal disclaimers.
L
aaa-001561
(dBm)
50
(1)
(2)
(2)
(3)
BLF7G10L-250; BLF7G10LS-250
Rev. 3 — 16 February 2012
52
50
40
30
20
10
0
(%)
η
48
D
Fig 6.
(dB)
52
Gp
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
21
20
19
18
17
16
P
0
V
Power gain and drain efficiency as function of
output power; typical values
L
DS
aaa-001559
(dBm)
= 30 V; I
56
G
η
(1)
(2)
(3)
D
p
Dq
40
= 1800 mA.
(1)
(2)
(3)
Power LDMOS transistor
80
© NXP B.V. 2012. All rights reserved.
P
L
aaa-001562
(W)
120
50
40
30
20
10
0
(%)
η
D
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