BLF7G10LS-250 NXP Semiconductors, BLF7G10LS-250 Datasheet - Page 4

• Manufacturer Part Number: BLF7G10LS-250
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G10L-250_7G10LS-250
Product data sheet
Fig 2.
(dB)
G
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
p
22
18
14
10
44
V
Power gain and drain efficiency as function of
output power; typical values
DS
= 30 V; I
7.2 Impedance information
7.3 CW pulsed
G
η
D
p
(1)
(2)
(3)
Dq
48
= 1800 mA.
Table 8.
I
Z
f
(MHz)
925
942
960
Dq
S
Fig 1.
and Z
= 1800 mA; main transistor V
L
defined in
Definition of transistor impedance
52
Typical impedance information
P
(1)
(2)
(3)
L
All information provided in this document is subject to legal disclaimers.
aaa-001555
(dBm)
Figure
BLF7G10L-250; BLF7G10LS-250
Rev. 3 — 16 February 2012
Z
()
3.1  j3.3
3.2  j3.3
3.4  j3.5
56
S
60
40
20
0
1.
(%)
η
D
DS
= 30 V.
Fig 3.
gate
Z
(dB)
G
S
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
p
22
18
14
10
0
V
Power gain and drain efficiency as function of
output power; typical values
DS
= 30 V; I
001aaf059
Z
drain
L
G
η
D
p
(1)
(2)
(3)
Dq
120
= 1800 mA.
Z
()
1.0  j1.7
1.0  j1.6
0.9  j1.4
L
Power LDMOS transistor
(1)
(2)
(3)
240
© NXP B.V. 2012. All rights reserved.
P
aaa-001556
L
(W)
360
60
40
20
0
(%)
η
D
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