BLF7G24L-100 NXP Semiconductors, BLF7G24L-100 Datasheet - Page 4

• Manufacturer Part Number: BLF7G24L-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G24L-100_7G24LS-100
Product data sheet
Fig 1.
Fig 3.
APCR
(dBc)
(dB)
G
(1) f = 2300 MHz
(2) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
19.5
18.5
17.5
16.5
−20
−30
−40
−50
−60
−70
p
885
0
V
Single carrier IS-95 power gain as a function of
load power; typical values
0
V
Single carrier IS-95 ACPR at 885 kHz as a
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
(2)
(1)
7.2 Single carrier IS-95
20
20
Dq
Dq
= 900 mA.
= 900 mA.
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
(2)
(1)
40
40
60
60
All information provided in this document is subject to legal disclaimers.
P
P
001aan495
001aan497
L
L
(W)
(W)
BLF7G24L-100; BLF7G24LS-100
80
80
Rev. 4 — 22 July 2011
Fig 2.
Fig 4.
APCR
(dBc)
(%)
η
(1) f = 2300 MHz
(2) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
D
−30
−40
−50
−60
−70
−80
1980
50
40
30
20
10
0
0
0
V
Single carrier IS-95 drain efficiency as a
function of load power; typical values
V
Single carrier IS-95 ACPR at 1980 kHz as a
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
20
20
Dq
Dq
= 900 mA.
= 900 mA.
40
40
Power LDMOS transistor
(2)
(1)
(1)
(2)
60
60
© NXP B.V. 2011. All rights reserved.
P
P
001aan496
001aan498
L
L
(W)
(W)
80
80
4 of 14