BLF7G24L-100 NXP Semiconductors, BLF7G24L-100 Datasheet - Page 5

100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz

BLF7G24L-100

Manufacturer Part Number
BLF7G24L-100
Description
100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BLF7G24L-100_7G24LS-100
Product data sheet
Fig 5.
PAR
(dB)
(1) f = 2300 MHz
(2) f = 2400 MHz
12
8
4
0
0
V
Single carrier IS-95 peak-to-average power
ratio as a function of load power;
typical values
DS
= 28 V; I
20
Dq
= 900 mA.
40
(1)
(2)
60
All information provided in this document is subject to legal disclaimers.
P
001aan499
L
(W)
BLF7G24L-100; BLF7G24LS-100
80
Rev. 4 — 22 July 2011
Fig 6.
P
(W)
L(M)
(1) f = 2300 MHz
(2) f = 2400 MHz
200
160
120
80
40
0
0
V
Single carrier IS-95 peak power as a function
of load power; typical values
DS
= 28 V; I
20
Dq
= 900 mA.
40
Power LDMOS transistor
(1)
(2)
60
© NXP B.V. 2011. All rights reserved.
P
001aan500
L
(W)
80
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