BLF8G10LS-160 NXP Semiconductors, BLF8G10LS-160 Datasheet - Page 10

160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz

BLF8G10LS-160

Manufacturer Part Number
BLF8G10LS-160
Description
160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
9. Abbreviations
10. Revision history
Table 11.
BLF8G10L-160_8G10LS-160
Product data sheet
Document ID
BLF8G10L-160_8G10LS-160 v.3
Modifications:
BLF8G10L-160_8G10LS-160 v.2
BLF8G10L-160_8G10LS-160 v.1
Revision history
Table 10.
Acronym
3GPP
CCDF
CW
DPCH
ESD
LDMOS
LDMOST
PAR
RF
VSWR
W-CDMA
Release
date
20120216
20111121
20110519
Abbreviations
The status of this data sheet has been changed to Product data sheet
Table 6 on page
Table 8 on page
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
BLF8G10L-160; BLF8G10LS-160
Rev. 3 — 16 February 2012
Data sheet status
Product data sheet
Preliminary data sheet
Objective data sheet
3: I
4: values rounded off to one decimal place
D
value changed to 2.2 mA at conditions of V
Change notice Supersedes
-
BLF8G10L-160_8G10LS-160
v.2
BLF8G10L-160_8G10LS-160
v.1
-
Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
(BR)DSS
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