BLF8G10LS-160 NXP Semiconductors, BLF8G10LS-160 Datasheet - Page 7

• Manufacturer Part Number: BLF8G10LS-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF8G10L-160_8G10LS-160
Product data sheet
Fig 10. Component layout
Printed-Circuit Board (PCB): Rogers RO4350; 
The vias can be used as a reference to place components.
The above layout shows the test circuit used to measure the devices in production. A more appropriate application
demonstration for specific customer needs can be provided.
See
Table 9
7.5 Circuit
C7
C9
C10
C8
for list of components.
C1
Table 9.
See
Component
C1, C2, C3, C4, C5, C6
C7, C9, C12, C14
C8, C10, C11, C13
C15, C16
C2
C3
Figure 10
List of components
for component layout.
All information provided in this document is subject to legal disclaimers.
BLF8G10L-160; BLF8G10LS-160
Rev. 3 — 16 February 2012
r
= 3.5 F/m; thickness = 0.762 mm; thickness copper plating = 35 m.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
C6
C5
82 pF
Value
10 F
1 F
470 F; 63 V
Power LDMOS transistor
C11
C13C14
C4
aaa-001295
C12 C15
© NXP B.V. 2012. All rights reserved.
C16
ATC 800B
Remarks
Murata
Murata
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