BLF8G10LS-160 NXP Semiconductors, BLF8G10LS-160 Datasheet - Page 4

• Manufacturer Part Number: BLF8G10LS-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF8G10L-160_8G10LS-160
Product data sheet
Fig 2.
(dB)
G
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
p
21
19
17
15
44
V
Power gain and drain efficiency as function of
output power; typical values
DS
= 30 V; I
G
η
D
p
46
7.2 Impedance information
7.3 CW pulse
Dq
= 1100 mA.
Table 8.
I
Z
f
(MHz)
925
942
960
Dq
48
S
Fig 1.
and Z
= 1100 mA; main transistor V
L
50
defined in
Definition of transistor impedance
Typical impedance information
(1)
(2)
(3)
52
All information provided in this document is subject to legal disclaimers.
aaa-001287
P
L
Figure
(dBm)
BLF8G10L-160; BLF8G10LS-160
Rev. 3 — 16 February 2012
Z
()
4.0  j3.8
4.4  j4.2
4.6  j4.1
54
S
70
60
50
40
30
20
10
1.
η
(%)
D
DS
= 30 V.
Fig 3.
gate
Z
(dB)
G
S
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
p
21
19
17
15
0
V
Power gain and drain efficiency as function of
output power; typical values
DS
= 30 V; I
001aaf059
50
Z
drain
L
G
η
D
p
Dq
= 1100 mA.
100
Z
()
1.7  j2.5
1.5  j2.2
1.4  j2.3
L
Power LDMOS transistor
150
(1)
(2)
(3)
© NXP B.V. 2012. All rights reserved.
200
aaa-001288
P
L
(W)
250
70
60
50
40
30
20
10
η
(%)
D
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