BLL6G1214L-250 NXP Semiconductors, BLL6G1214L-250 Datasheet - Page 2

• Manufacturer Part Number: BLL6G1214L-250
• Description: 250 W LDMOS power transistor intended for L-band radar applications in the 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLL6G1214L-250
Preliminary data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number
BLL6G1214L-250
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 February 2012
Package
Name
-
Description
flanged LDMOST ceramic package;
2 mounting holes; 2 leads
Conditions
[1]
LDMOS L-band radar power transistor
Simplified outline
BLL6G1214L-250
1
2
3
Graphic symbol
Min
-
0.5
-
65
-
© NXP B.V. 2012. All rights reserved.
2
Version
SOT502A
Max
89
+11
59
+150
200
sym112
1
3
2 of 14
Unit
V
V
A
C
C