BLL6G1214L-250 NXP Semiconductors, BLL6G1214L-250 Datasheet - Page 4

• Manufacturer Part Number: BLL6G1214L-250
• Description: 250 W LDMOS power transistor intended for L-band radar applications in the 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Application information
BLL6G1214L-250
Preliminary data sheet
Fig 1.
(dB)
G
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
p
18
12
6
0
0
t
Power gain as a function of output power;
typical values
p
= 100 s;  = 10 %; T
6.1 Ruggedness in class-AB operation
7.1 Graphs
100
Table 7.
Test signal: pulsed RF; t
T
[1]
The BLL6G1214L-250 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol

t
t
G
P
RL
Dq
r
f
case
D
droop(pulse)
p
in
= 150 mA; P
The rise and fall time of the input circuit will be 5 ns maximum.
200
= 25
h
= 25 C.

C; unless otherwise specified, in a class-AB production test circuit.
RF characteristics
Parameter
drain efficiency
rise time
fall time
power gain
pulse droop power
input return loss
300
(3)
All information provided in this document is subject to legal disclaimers.
L
aaa-002251
P
(2)
= 250 W; t
L
(W)
(1)
p
Rev. 1 — 16 February 2012
400
= 1 ms;
p
…continued
= 1 ms;  = 10 %.

= 10 %; RF performance at V
Fig 2.
Conditions
P
P
L
L
(%)
= 250 W
= 250 W
η
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
D
50
40
30
20
10
0
0
t
Drain efficiency as a function of output power;
typical values
p
= 100 s;  = 10 %; T
LDMOS L-band radar power transistor
100
BLL6G1214L-250
DS
200
= 36 V; I
h
[1]
[1]
= 25 C.
Min
42
-
-
13
-
-
DS
Dq
300
(3)
= 36 V;
© NXP B.V. 2012. All rights reserved.
= 150 mA;
aaa-002252
Typ Max
45
-
-
15
-
-
P
(2)
L
(1)
(W)
-
200
200
-
0.6
8
400
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Unit
%
ns
ns
dB
dB
dB