BLL6G1214L-250 NXP Semiconductors, BLL6G1214L-250 Datasheet - Page 5

• Manufacturer Part Number: BLL6G1214L-250
• Description: 250 W LDMOS power transistor intended for L-band radar applications in the 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLL6G1214L-250
Preliminary data sheet
Fig 3.
Fig 5.
(W)
P
(W)
P
L
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
400
300
200
100
350
300
250
200
150
100
L
50
0
0
0
t
Output power as a function of input power;
typical values
0
t
Output power as a function of input power;
typical values
p
p
= 100 s;  = 10 %; T
= 1 ms;  = 10 %; T
5
5
h
10
10
= 25 C.
h
= 25 C.
15
15
All information provided in this document is subject to legal disclaimers.
aaa-002253
aaa-002255
(2)
P
P
(2)
i
i
(3)
(3)
(W)
(W)
(1)
(1)
Rev. 1 — 16 February 2012
20
20
Fig 4.
Fig 6.
G
p
(dB)
, RL
(dB)
G
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
p
30
24
16
12
18
12
in
6
0
6
0
1150
0
P
Power gain, input return loss and drain
efficiency as function of frequency; typical
values
t
Power gain as a function of output power;
typical values
p
L
= 1 ms;  = 10 %; T
= 250 W; t
50
LDMOS L-band radar power transistor
100
BLL6G1214L-250
1250
p
= 100 s;  = 10 %; T
150
h
= 25 C.
200
1350
250
© NXP B.V. 2012. All rights reserved.
f (MHz)
P
h
(3)
aaa-002254
aaa-002256
300
L
= 25 C.
η
G
RL
(W)
D
(2)
p
in
(1)
1450
350
50
48
46
44
42
40
(%)
η
D
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