BLM6G22-30 NXP Semiconductors, BLM6G22-30 Datasheet - Page 10

30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz

BLM6G22-30

Manufacturer Part Number
BLM6G22-30
Description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
11. Handling information
12. Abbreviations
BLM6G22-30_BLM6G22-30G
Product data sheet
11.1 ESD protection
11.2 Moisture sensitivity
Table 9.
Table 10.
Table 11.
Test condition
Human Body Model (HBM)
Machine Model (MM)
Test methodology
JESD-22-A113
Acronym
3GPP
CCDF
CW
DPCH
IS-95
LDMOS
MMIC
PA
PAR
PDPCH
RF
VSWR
W-CDMA
ESD protection characteristics
Moisture sensitivity level
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
Interim Standard 95
Laterally Diffused Metal-Oxide Semiconductor
Monolithic Microwave Integrated Circuit
Power Amplifier
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Rev. 4 — 7 March 2011
BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
Class
1
1
Class
3
© NXP B.V. 2011. All rights reserved.
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