BF1210 NXP Semiconductors, BF1210 Datasheet - Page 16

• Manufacturer Part Number: BF1210
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1210_1
Product data sheet
Fig 28. Amplifier B: input admittance as a function of
Fig 30. Amplifier B: reverse transfer admittance and
b
(mS)
(mS)
is
Y
, g
10
10
rs
10
10
10
10
10
is
1
1
2
1
2
3
2
V
I
frequency; typical values
V
I
phase as a function of frequency; typical values
10
D(B)
10
D(B)
DS(B)
DS(B)
= 13 mA.
= 13 mA.
= 5 V; V
= 5 V; V
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
Y
b
g
DS(A)
DS(A)
is
is
rs
rs
f (MHz)
f (MHz)
= 0 V;
= 0 V;
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Rev. 01 — 25 October 2006
10
10
3
3
10
10
10
1
(deg)
3
2
rs
Fig 29. Amplifier B: forward transfer admittance and
Fig 31. Amplifier B: output admittance as a function of
b
os
(mS)
(mS)
Y
10
10
, g
fs
10
10
10
os
1
1
2
1
2
V
I
phase as a function of frequency; typical values
V
I
frequency; typical values
10
10
D(B)
D(B)
DS(B)
DS(B)
= 13 mA.
= 13 mA.
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOSFET
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
b
g
Y
DS(A)
os
os
DS(A)
fs
fs
f (MHz)
f (MHz)
= 0 V;
= 0 V;
© NXP B.V. 2006. All rights reserved.
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BF1210
10
10
3
3
10
(deg)
10
1
16 of 21
2
fs