BF1210 NXP Semiconductors, BF1210 Datasheet - Page 6

• Manufacturer Part Number: BF1210
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1210_1
Product data sheet
Fig 2. Amplifier A: transfer characteristics; typical
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
D
40
30
20
10
0
V
values
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(A)
= 4.0 V.
= 3.5 V.
= 3.0 V.
= 2.5 V.
= 2.0 V.
= 1.5 V.
= 1.0 V.
= 5 V; T
8.1.1 Graphs for amplifier A
0.5
j
= 25 C.
1.0
1.5
V
(1)
(2)
(3)
G1-S
001aaf476
(V)
(4)
(5)
(6)
(7)
Rev. 01 — 25 October 2006
2.0
Fig 3. Amplifier A: output characteristics; typical
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
(8) V
(9) V
I
D
30
20
10
0
V
values
0
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G1-S(A)
G2-S
= 4 V; T
= 1.8 V.
= 1.7 V.
= 1.6 V.
= 1.5 V.
= 1.4 V.
= 1.3 V.
= 1.2 V.
= 1.1 V.
= 1.0 V.
Dual N-channel dual gate MOSFET
j
= 25 C.
2
4
V
© NXP B.V. 2006. All rights reserved.
DS
001aaf477
BF1210
(V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
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