BF1210 NXP Semiconductors, BF1210 Datasheet - Page 9

• Manufacturer Part Number: BF1210
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1210_1
Product data sheet
Fig 10. Amplifier A: typical gain reduction as a function
Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values
reduction
gain
(dB)
10
20
30
40
50
0
V
R
see
of the AGC voltage; typical values
V
0
DS(A)
DS(A)
G1(A)
Figure
= 5 V; V
= 5 V; V
= 59 k ; f = 50 MHz; T
32.
1
GG
GG
= 5 V; I
= 5 V; V
2
D(nom)(A)
G2-S(nom)
amb
(mA)
I
D
30
20
10
= 25 C;
= 19 mA;
0
3
= 4 V; R
0
V
AGC
001aaf484
(V)
G1(A)
10
Rev. 01 — 25 October 2006
4
= 59 k ; f = 50 MHz; I
20
Fig 11. Amplifier A: unwanted voltage for 1 %
30
(dB V)
V
unw
110
100
90
80
gain reduction (dB)
V
R
I
cross modulation as a function of gain
reduction; typical values
D(nom)(A)
D(nom)(A)
0
DS(A)
G1(A)
40
001aaf486
= 5 V; V
= 59 k ; f
= 19 mA; T
= 19 mA; T
10
50
Dual N-channel dual gate MOSFET
GG
w
= 5 V; V
= 50 MHz; f
20
amb
amb
= 25 C; see
= 25 C; see
G2-S(nom)
30
unw
= 60 MHz;
gain reduction (dB)
= 4 V;
© NXP B.V. 2006. All rights reserved.
40
Figure
Figure
001aaf485
BF1210
32.
32.
50
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