BF1212 NXP Semiconductors, BF1212 Datasheet - Page 10

• Manufacturer Part Number: BF1212
• Description: Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 1 Scattering parameters: V
Table 2 Noise data: V
2003 Nov 14
handbook, full pagewidth
(MHz)
1000
100
200
300
400
500
600
700
800
900
N-channel dual-gate MOS-FETs
50
f
(MHz)
MAGNITUDE
400
800
f
(ratio)
0.990
0.988
0.983
0.974
0.969
0.958
0.947
0.936
0.924
0.910
0.896
s
11
DS
= 5 V; V
ANGLE
13.40
19.86
26.46
32.73
38.83
44.75
50.51
56.18
61.64
R GEN
3.39
6.76
(deg)
50 Ω
V I
G2-S
DS
50 Ω
(dB)
F
= 5 V; V
MAGNITUDE
0.9
1.1
min
R2
= 4 V; I
Fig.21 Cross-modulation test set-up.
(ratio)
3.288
3.280
3.261
3.218
3.205
3.141
3.086
3.017
2.949
2.870
2.785
4.7 nF
C2
G2-S
D
= 12 mA; T
s
V GG
21
10 kΩ
= 4 V; I
R G1
R1
V AGC
ANGLE
(deg)
176.5
173.0
166.1
159.0
152.6
145.9
139.5
133.1
126.9
120.5
114.7
4.7 nF
D
10
C1
amb
= 12 mA; T
(ratio)
0.695
0.634
= 25 C
MAGNITUDE
DUT
BF1212; BF1212R; BF1212WR
0.0005
0.0021
0.0030
0.0039
0.0045
0.0049
0.0051
0.0051
0.0049
0.0045
0.0011
(ratio)

amb
V DS
opt
L1
≈
= 25 C
4.7 nF
4.7 nF
2.2 μH
s
C3
C4
12
(deg)
13.87
30.30
ANGLE
(deg)
MGS315
86.9
85.6
81.2
77.5
74.6
72.4
70.9
69.5
69.9
69.8
72.7
R L
50 Ω
MAGNITUDE
(ratio)
0.990
0.990
0.991
0.991
0.994
0.994
0.993
0.991
0.981
0.984
0.980
Product specification
32.85
28.5
s
()
R
22
n
ANGLE
13.30
16.56
19.77
22.78
25.77
28.72
31.77
(deg)
1.66
3.30
6.62
9.92