BF1212 NXP Semiconductors, BF1212 Datasheet - Page 4

• Manufacturer Part Number: BF1212
• Description: Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
STATIC CHARACTERISTICS
T
Note
1. R
2003 Nov 14
handbook, halfpage
V
V
V
V
V
V
V
I
I
I
SYMBOL
j
DSX
G1-S
G2-S
= 25 C unless otherwise specified.
(BR)DSS
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
N-channel dual-gate MOS-FETs
(mW)
(1) BF1212WR.
(2) BF1212; BF1212R.
P tot
G1
250
200
150
100
50
0
connects G
0
drain-source breakdown voltage
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
Fig.4 Power derating curve.
50
1
to V
PARAMETER
GG
100
= 5 V.
(2)
(1)
150
T s (°C)
MDB828
200
V
V
V
V
V
V
V
V
note 1
V
V
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
= V
= V
= V
= V
= V
= 4 V; V
= 5 V; V
= 4 V; V
= V
= V
4
G2-S
DS
DS
DS
DS
DS
DS
= 0 V; I
= 0 V; I
= 0 V; I
= 0 V; I
= 0 V; V
= 0 V; V
CONDITIONS
= 0 V; I
DS
DS
DS
= 5 V; I
= 5 V; I
= 5 V; R
BF1212; BF1212R; BF1212WR
G1-S
G2-S
S-G1
S-G2
G1-S
G2-S
D
= 10 A
= 10 mA
= 10 mA
= 10 mA
= 10 mA
D
D
= 5 V
= 4 V
G1
= 100 A
= 100 A
= 150 k;
6
6
6
0.5
0.5
0.3
0.35
8


MIN.
Product specification

10
10
1.5
1.5
1.0
1.0
16
50
20
MAX.
V
V
V
V
V
V
V
mA
nA
nA
UNIT