STM8S903K3 STMicroelectronics, STM8S903K3 Datasheet - Page 86

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STM8S903K3

Manufacturer Part Number
STM8S903K3
Description
16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, 1 Kbyte RAM, 640 bytes EEPROM
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8S903K3

Program Memory
8 Kbytes Flash; data retention 20 years at 55 °C after 10 kcycles
Data Memory
640 bytes true data EEPROM; endurance 300 kcycles
Ram
1 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

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Electrical characteristics
86/115
Symbol
Symbol
V
V
C
t
t
t
(1)
by the external source. The internal resistance of the analog source must allow the
capacitance to reach its final voltage level within t
changes of the analog input voltage have no effect on the conversion result. Values for the
sample clock t
|E
|E
|E
|E
S
STAB
CONV
AIN
BGREF
ADC
T
O
G
D
(1)
During the sample time the input capacitance C
|
|
|
|
Parameter
Conversion voltage range
Internal bandgap reference
voltage
Internal sample and hold
capacitor
Minimum sampling time
Wake-up time from standby
Minimum total conversion
time (including sampling time,
10-bit resolution)
Parameter
Total unadjusted error
Offset error
Gain error
Differential linearity error
S
depend on programming.
Table 48: ADC accuracy with R
(2)
(2)
DocID15590 Rev 6
(2)
(1)
(2)
Conditions
V
V
f
f
f
f
Conditions
ADC
ADC
ADC
ADC
f
f
f
f
f
f
f
f
f
f
f
DD
DD
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
=4.5 to 5.5 V
=2.95 to 5.5 V
= 4 MHz
= 6 MHz
= 4 MHz
= 6 MHz
= 2 MHz
= 4 MHz
= 6 MHz
= 2 MHz
= 4 MHz
= 6 MHz
= 2 MHz
= 4 MHz
= 6 MHz
= 2 MHz
= 4 MHz
AIN
S.
AIN
After the end of the sample time t
(3 pF max) can be charged/discharged
< 10 kΩ , V
Min
STM8S903K3 STM8S903F3
1.19
V
1
SS
Typ
DD
1.6
2.2
2.4
1.1
1.5
1.8
1.5
2.1
2.2
0.7
0.7
= 5 V
Typ
1.22
0.75
2.33
0.5
3.5
14
3
7
Max
Max
3.5
4.5
2.5
1.5
1.5
1.25
V
4
3
3
3
3
4
(1)
6
DD
Unit
Unit
1/f
LSB
S
pF
µs
µs
µs
µs
V
V
ADC
,

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