STM8S903K3 STMicroelectronics, STM8S903K3 Datasheet - Page 89

• Manufacturer Part Number: STM8S903K3
• Description: 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, 1 Kbyte RAM, 640 bytes EEPROM
• Manufacturer: STMicroelectronics

Specifications of STM8S903K3

• Program Memory: 8 Kbytes Flash; data retention 20 years at 55 °C after 10 kcycles
• Data Memory: 640 bytes true data EEPROM; endurance 300 kcycles
• Ram: 1 Kbytes
• Advanced Control Timer: 16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

STM8S903K3 STM8S903F3
10.3.11.2
10.3.11.3
•
•
A device reset allows normal operations to be resumed. The test results are given in the table
below based on the EMS levels and classes defined in application note AN1709 (EMC design
guide for STMicrocontrollers).
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring. See application note AN1015 (Software techniques
for improving microcontroller EMC performance).
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O ports),
the product is monitored in terms of emission. This emission test is in line with the norm SAE
IEC 61967-2 which specifies the board and the loading of each pin.
Symbol
V
V
(1)
in AN2860 (EMC guidelines for STM8S microcontrollers).
FESD
EFTB
Data obtained with HSI clock configuration, after applying HW recommendations described
FESD: Functional electrostatic discharge (positive and negative) is applied on all pins of
the device until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with
the IEC 61000-4-4 standard.
Parameter
Voltage limits to be
applied on any I/O pin to
induce a functional
disturbance
Fast transient voltage
burst limits to be applied
through 100 pF on V
and V
functional disturbance
SS
pins to induce a
DocID15590 Rev 6
DD
Table 50: EMS data
Conditions
V
(HSI clock), conforming to IEC 61000-4-2
V
(HSI clock),conforming to IEC 61000-4-4
DD
DD
= 3.3 V, T
= 3.3 V, T
A
A
= 25 °C ,f
= 25 °C, f
MASTER
MASTER
Electrical characteristics
= 16 MHz
= 16 MHz
DD
Level/
class
and V
2/B
4/A
89/115
(1)
(1)
SS