CM1200HC-90R Powerex Inc, CM1200HC-90R Datasheet - Page 3

• Manufacturer Part Number: CM1200HC-90R
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM1200HC-90R

• Prx Availability: RequestQuote
• Voltage: 4500V
• Current: 1200A
• Circuit Configuration: Single
• Rohs Compliant: No

4
t
t
E
E
V
t
I
Q
E
E
THERMAL CHARACTERISTICS
R
R
R
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
d(off)
f
rr
rr
th
off(10%)
off
EC
rec(10%)
rec
th(j-c)Q
th(j-c)R
th(c-f)
rr
Symbol
Symbol
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Turn-off switching energy
Emitter-collector voltage
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
Reverse recovery energy
Thermal resistance
Thermal resistance
Contact thermal resistance
Item
Item
(Note 5)
(Note 6)
(Note 2)
(Note 2)
(Note 2)
(Note 5)
(Note 6)
(Note 2)
(Note 2)
(Note 2)
V
I
V
R
L
Inductive load
I
V
V
I
V
R
L
Inductive load
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λ
C
E
C
s
s
CC
GE
G(off)
GE
CC
GE
G(on)
= 1200 A
= 1200 A
= 1200 A
= 150 nH
= 150 nH
= 2800 V
= ±15 V
= 0 V
= 2800 V
= ±15 V
= 22 Ω
= 2.7 Ω
grease
(Note 4)
Conditions
Conditions
= 1W/m·K, D
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
(c-f)
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 100 µm
CM1200HC-90R
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
Min
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Limits
1200
1300
1000
1700
6.25
6.60
0.40
0.50
3.35
4.15
3.90
4.80
2.60
2.80
0.70
0.90
1.40
2.30
1.55
2.50
Typ
Typ
6.0
—
—
HVM-1057-A
INSULATED TYPE
8.00
1.20
3.40
Max
Max
18.5
9.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
K/kW
K/kW
K/kW
3 of 8
Unit
Unit
J/P
J/P
J/P
J/P
µC
µs
µs
µs
V
A