CM1200HC-90R Powerex Inc, CM1200HC-90R Datasheet - Page 7

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CM1200HC-90R

Manufacturer Part Number
CM1200HC-90R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1200HC-90R

Prx Availability
RequestQuote
Voltage
4500V
Current
1200A
Circuit Configuration
Single
Rohs Compliant
No
4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY
100
0.1
12
10
10
HALF-BRIDGE SWITCHING ENERGY
8
6
4
2
0
1
100
0
CHARACTERISTICS (TYPICAL)
CHARACTERISTICS (TYPICAL)
V
V
Tj = 125°C, Inductive load
V
R
Tj = 125°C, Inductive load
CC
GE
CC
G(on)
= ±15V, L
= 2800V, I
= 2800V, V
= 2.7Ω, L
10
S
C
Emitter Current [A]
= 150nH
Gate resistor [Ohm]
= 1200A
GE
Eoff
S
= 150nH
= ±15V
20
1000
30
40
Irr
trr
10000
50
10000
1000
100
10
HALF-BRIDGE SWITCHING TIME
REVERSE BIAS SAFE OPERATING AREA
0.01
100
0.1
3000
2500
2000
1500
1000
10
500
1
100
CHARACTERISTICS (TYPICAL)
0
0
V
R
L
Inductive load
S
CC
G(on)
V
Tj = 125°C, R
tr
= 150nH, Tj = 125°C
tf
CC
= 2800V, V
≤ 3200V, V
= 2.7Ω, R
Collector-Emitter Voltage [V]
1000
CM1200HC-90R
Collector Current [A]
(RBSOA)
GE
G(off)
G(off)
GE
= ±15V
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
= ±15V
2000
= 22Ω
= 22Ω
1000
3000
HVM-1057-A
INSULATED TYPE
4000
td(off)
td(on)
10000
5000
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