CM1200HC-90R Powerex Inc, CM1200HC-90R Datasheet - Page 6

• Manufacturer Part Number: CM1200HC-90R
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM1200HC-90R

• Prx Availability: RequestQuote
• Voltage: 4500V
• Current: 1200A
• Circuit Configuration: Single
• Rohs Compliant: No

4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1000
16
14
12
10
HALF-BRIDGE SWITCHING ENERGY
100
8
6
4
2
0
CAPACITANCE CHARACTERISTICS
10
0
1
CHARACTERISTICS (TYPICAL)
0.1
V
R
L
Inductive load
S
CC
G(on)
= 150nH, Tj = 125°C
= 2800V, V
V
f = 100kHz
= 2.7Ω, R
500
GE
Collector-Emitter Voltage [V]
= 0V, Tj = 25°C
Collector Current [A]
GE
G(off)
(TYPICAL)
= ±15V
1000
1
= 22Ω
1500
10
2000
Coes
Cies
Cres
Erec
2500
Eoff
Eon
100
-10
-15
12
10
20
15
10
HALF-BRIDGE SWITCHING ENERGY
GATE CHARGE CHARACTERISTICS
-5
8
6
4
2
0
5
0
0
0
CHARACTERISTICS (TYPICAL)
V
V
Tj = 125°C, Inductive load
CC
GE
V
Tj = 25°C
= ±15V, L
= 2800V, I
CE
= 2800V, I
1
S
CM1200HC-90R
5
C
= 150nH
Gate resistor [Ohm]
= 1200A
(TYPICAL)
C
Gate Charge [µC]
= 1200A
Erec
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
Eon
2
10
3
HVM-1057-A
INSULATED TYPE
15
4
6 of 8
20
5