CM1200HC-90R Powerex Inc, CM1200HC-90R Datasheet - Page 8
CM1200HC-90R
Manufacturer Part Number
CM1200HC-90R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet
1.CM1200HC-90R.pdf
(8 pages)
Specifications of CM1200HC-90R
Prx Availability
RequestQuote
Voltage
4500V
Current
1200A
Circuit Configuration
Single
Rohs Compliant
No
4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
12
10
1.2
0.8
0.6
0.4
0.2
8
6
4
2
0
TRANSIENT THERMAL IMPEDANCE
1
0
0.001
SAFE OPERATING AREA (SCSOA)
0
V
Tj = 125°C, R
Rth(j-c)Q = 9.5K/kW
Rth(j-c)R = 18.5K/kW
CC
≤ 3200V, V
1000
Collector-Emitter Voltage [V]
CHARACTERISTICS
0.01
SHORT CIRCUIT
G(on)
GE
= ±15V
= 2.7Ω, R
2000
Time [s]
0.1
G(off)
3000
= 22Ω
1
4000
5000
10
Z
R
τ
i
i
[sec] :
FREE-WHEEL DIODE REVERSE RECOVERY
[K/kW] :
th
j (
3000
2500
2000
1500
1000
−
) c
500
SAFE OPERATING AREA (RRSOA)
(
0
) t
0
=
V
Tj = 125°C
∑
i
CC
n
=
1
≤ 3200V, di/dt < 6kA/µs
Emitter-Collector Voltage [V]
0.0096
0.0001
1
1000
R
i
CM1200HC-90R
⎧
⎪
⎨
⎪ ⎩
1
−
2000
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
exp
0.1893
0.0058
2
⎛
⎜
⎜
⎝
−
3000
τ
t
HVM-1057-A
i
⎞
⎟
⎟
⎠
⎫
⎪
⎬
⎪ ⎭
0.4044
0.0602
3
INSULATED TYPE
4000
5000
4
0.3967
0.3512
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