FDMS3620S Fairchild Semiconductor, FDMS3620S Datasheet - Page 3

• Manufacturer Part Number: FDMS3620S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3620S Rev.C
©2012 Fairchild Semiconductor Corporation
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1.R
the user's board design.
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :E
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
V
t
Q
rr
Q2: E
SD
rr
θJA
Symbol
is determined with the device mounted on a 1 in
AS
AS
of 29 mJ is based on starting T
of 135 mJ is based on starting T
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
J
J
a. 57 °C/W when mounted on
b. 125 °C/W when mounted on a
= 25
= 25
a 1 in
minimum pad of 2 oz copper
o
o
C; N-ch: L = 0.3 mH, I
C; N-ch: L = 0.3 mH, I
2
pad of 2 oz copper
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
AS
AS
V
V
Q1
I
Q2
I
F
F
GS
GS
= 14 A, V
= 30 A, V
= 17.5 A, di/dt = 100 A/μs
= 38 A, di/dt = 300 A/μs
= 0 V, I
= 0 V, I
Test Conditions
DD
DD
3
= 23 V, V
S
S
= 23 V, V
= 17.5 A
= 38 A
GS
GS
= 10 V. 100% test at L= 0.1 mH, I
= 10 V. 100% test at L= 0.1 mH, I
(Note 2)
(Note 2)
θJC
Type
d. 120 °C/W when mounted on a
c. 50 °C/W when mounted on
Q1
Q2
Q1
Q2
Q1
Q2
is guaranteed by design while R
minimum pad of 2 oz copper
a 1 in
2
pad of 2 oz copper
Min
AS
AS
= 20 A.
= 44 A.
Typ
0.8
0.8
23
38
54
9
www.fairchildsemi.com
Max
θCA
1.2
1.2
is determined by
Units
nC
ns
V